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SUV85N10-10
Vishay Siliconix
New Product
SPECIFICATIONS (T J =25 _ C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
V (BR)DSS
V GS(th)
I GSS
V GS = 0 V, I D = 250 m A
V DS = V GS , I D = 250 m A
V DS = 0 V, V GS = " 20 V
100
1
3
" 100
V
nA
V DS = 80 V, V GS = 0 V
1
Zero Gate Voltage Drain Current
I DSS
V DS = 80 V, V GS = 0 V, T J = 125 _ C
50
m A
V DS = 80 V, V GS = 0 V, T J = 175 _ C
250
On-State Drain Current a
I D(on)
V DS w 5 V, V GS = 10 V
V GS = 10 V, I D = 30 A
120
0.0085
0.0105
A
Drain-Source On-State Resistance a
r DS(on)
V GS = 4.5 V, I D = 20 A
V GS = 10 V, I D = 30 A, T J = 125 _ C
0.0010
0.012
0.017
W
V GS = 10 V, I D = 30 A, T J = 175 _ C
0.022
Forward Transconductance a
g fs
V DS = 15 V, I D = 30 A
25
S
Dynamic b
Input Capacitance
C iss
6550
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge c
Gate-Source Charge c
Gate-Drain Charge c
Turn-On Delay Time c
C oss
C rss
Q g
Q gs
Q gd
t d(on)
V GS = 0 V, V DS = 25 V, f = 1 MHz
V DS = 50 V, , V GS = 10 V, , I D = 85 A
665
265
105
17
23
12
160
25
pF
nC
Rise Time c
Turn-Off Delay Time c
Fall Time c
t r
t d(off)
t f
V DD = 50 V, R L = 0.6 W
I D ^ 85 A, V GEN = 10 V, R G = 2.5 W
90
55
130
135
85
195
ns
Source-Drain Diode Ratings and Characteristics (T C = 25 _ C) b
Continuous Current
I S
85
Pulsed Current
I SM
240
A
Forward Voltage a
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
V SD
t rr
I RM(REC)
Q rr
I F = 85 A, V GS = 0 V
I F = 50 A, , di/dt = 100 A/ m s
1.0
85
4.5
0.17
1.5
140
7
0.35
V
ns
A
m C
Notes
a. Pulse test; pulse width v 300 m s, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
www.vishay.com
2
Document Number: 72039
S-03601—Rev. B, 31-Mar-03
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